BYD-IGBT-1200V-100A

✓ In Stock

High-quality power semiconductors component designed for reliable performance in industrial and commercial applications.

Product Overview

Description

1200V 100A IGBT module with trench field-stop technology. Low VCE(sat) for high efficiency.

62mm standard package with excellent thermal performance. Operating temperature -40°C to +150°C.

In stock for EV and industrial applications. FAE support for gate drive and thermal design.

Product Series

IGBT Module

Primary Application

Key Features

  • High efficiency and reliability
  • Optimized for industrial applications
  • Comprehensive technical support
  • Available from stock

Specifications

Part Number BYD-IGBT-1200V-100A
Voltage 1200V
Current 100A
Rds On N/A
Package 62mm
Short Description High-quality power semiconductors component designed for reliable performance in industrial and commercial applications.
Description Paragraphs 1200V 100A IGBT module with trench field-stop technology. Low VCE(sat) for high efficiency.,62mm standard package with excellent thermal performance. Operating temperature -40°C to +150°C.,In stock for EV and industrial applications. FAE support for gate drive and thermal design.
Features Trench field-stop IGBT technology,1200V voltage rating with 100A current capability,Low VCE(sat) of 1.7V typical,62mm package with RthJC = 0.35K/W,Built-in fast recovery diode,AEC-Q101 automotive qualification
Applications EV motor drives,Industrial inverters,Solar inverters,UPS systems
Stock In Stock
Moq 10
Lead Time 2-4 weeks
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Companion Parts COMP-A,COMP-B,COMP-C
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Applications

Motor Drives

Variable frequency drives and servo motor controls

Power Supplies

SMPS, UPS, and industrial power systems

Renewable Energy

Solar inverters and wind turbine converters

EV Charging

Electric vehicle charging stations

Documents & Resources

FAE Expert Insights

S

"Good performance and reliability. Suitable for various industrial applications."

Reliable, good performance

— Senior FAE, LiTong Electronics

Frequently Asked Questions

What is the VCE(sat) of BYD-IGBT-1200V-100A?

BYD-IGBT-1200V-100A features low VCE(sat) of 1.7V typical at 25°C junction temperature and rated current. At 125°C junction temperature, VCE(sat) increases to approximately 2.0V. This low saturation voltage minimizes conduction losses, improving overall system efficiency. For a 100A application, conduction loss is approximately 170W at 25°C. The low VCE(sat) is achieved through advanced trench field-stop technology and optimized chip design.

Contact our FAE team for loss calculations and efficiency analysis.

BYD IGBT VCE(sat) saturation voltage IGBT conduction loss
What is the switching speed of BYD-IGBT-1200V-100A?

BYD-IGBT-1200V-100A switching characteristics: (1) Turn-on time: 150ns typical with recommended gate drive. (2) Turn-off time: 300ns typical including tail current. (3) Switching energy: Eon = 3.5mJ, Eoff = 4.5mJ at rated conditions. (4) Maximum switching frequency: 20kHz for hard switching applications. (5) Recommended gate resistance: 10-22Ω for optimal switching. The module is optimized for 10-20kHz switching frequency typical of motor drive and inverter applications.

Contact our FAE team for switching optimization and gate drive design.

BYD IGBT switching speed IGBT switching time switching frequency
What gate drive voltage is recommended for BYD-IGBT-1200V-100A?

BYD-IGBT-1200V-100A recommended gate drive: (1) Turn-on voltage: +15V for optimal conduction and fast switching. (2) Turn-off voltage: -8V to ensure reliable turn-off and dv/dt immunity. (3) Gate resistor: 10-22Ω typical, selected based on switching speed and EMI requirements. (4) Gate drive power: approximately 2W at 20kHz switching frequency. (5) Isolation: reinforced isolation required for high-voltage applications. BYD provides recommended gate drive circuits and component selection guidelines.

Contact our FAE team for gate drive circuit design and component recommendations.

BYD IGBT gate drive gate voltage IGBT driver
What is the thermal resistance of BYD-IGBT-1200V-100A?

BYD-IGBT-1200V-100A thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.35K/W (IGBT) and 0.65K/W (diode). (2) Maximum junction temperature Tj(max) = 150°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +125°C. For continuous operation at 100A with 1.7V VCE(sat), conduction loss is 170W, requiring a heatsink with thermal resistance of approximately 0.2K/W or better to maintain junction temperature below 125°C at 40°C ambient.

Contact our FAE team for thermal simulation and heatsink selection.

BYD IGBT thermal resistance RthJC thermal design
Is BYD-IGBT-1200V-100A suitable for EV applications?

Yes, BYD-IGBT-1200V-100A is well-suited for EV applications: (1) 1200V rating supports 800V EV platforms with adequate margin. (2) 100A current rating supports EV motors up to 100-150kW peak power. (3) AEC-Q101 automotive qualification ensures reliability. (4) Low switching losses enable high-efficiency operation. (5) 10μs short-circuit withstand time provides protection during faults. (6) Proven in BYD's own EVs with millions of kilometers of operation. The module is used in both passenger and commercial vehicle applications.

Contact our FAE team for EV application support and reference designs.

BYD IGBT EV automotive IGBT EV powertrain
How does BYD-IGBT-1200V-100A compare to international brands?

BYD-IGBT-1200V-100A offers competitive performance compared to international brands: (1) Electrical performance - comparable VCE(sat), switching losses, and SOA. (2) Thermal performance - RthJC of 0.35K/W is competitive with leading brands. (3) Reliability - AEC-Q101 qualified with extensive automotive testing. (4) Cost - typically 20-30% more cost-effective than equivalent international brands. (5) Supply - shorter lead times and better availability in Asia-Pacific. BYD's vertical integration ensures consistent quality and reliable supply.

Request samples for comparison testing in your specific application.

BYD IGBT comparison IGBT performance power module comparison