BYD-SiC-1200V-80mΩ
High-quality power semiconductors component designed for reliable performance in industrial and commercial applications.
Product Overview
Description
1200V SiC MOSFET with 80mΩ RDS(on). High switching speed up to 100kHz.
TO-247-4 package with Kelvin source connection. Operating temperature -55°C to +175°C.
In stock for high-frequency applications. FAE support for gate drive and layout design.
Product Series
SiC MOSFET
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | BYD-SiC-1200V-80mΩ |
|---|---|
| Voltage | 1200V |
| Current | 50A |
| Rds On | 80mΩ |
| Package | TO-247-4 |
| Short Description | High-quality power semiconductors component designed for reliable performance in industrial and commercial applications. |
| Description Paragraphs | 1200V SiC MOSFET with 80mΩ RDS(on). High switching speed up to 100kHz.,TO-247-4 package with Kelvin source connection. Operating temperature -55°C to +175°C.,In stock for high-frequency applications. FAE support for gate drive and layout design. |
| Features | Silicon carbide technology with high switching speed,1200V voltage rating with 80mΩ RDS(on),Fast switching: tr = 20ns, tf = 15ns,Low switching losses for high efficiency,TO-247-4 package with Kelvin source,AEC-Q101 automotive qualification |
| Applications | EV charging,DC-DC converters,Solar inverters,High-frequency power supplies |
| Stock | In Stock |
| Moq | 50 |
| Lead Time | 4-6 weeks |
| Faqs | [object Object],[object Object],[object Object],[object Object],[object Object],[object Object] |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
| Companion Parts | COMP-A,COMP-B,COMP-C |
| Slug | byd-sic-1200v-80m- |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"Good performance and reliability. Suitable for various industrial applications."
Reliable, good performance
— Senior FAE, LiTong Electronics
Frequently Asked Questions
What gate drive voltage is required for BYD-SiC-1200V-80mΩ?
BYD-SiC-1200V-80mΩ gate drive requirements: (1) Turn-on voltage: +15V to +18V for low RDS(on). (2) Turn-off voltage: -3V to -5V (negative voltage required for dv/dt immunity). (3) Gate resistor: 5-10Ω for fast switching. (4) Gate drive power: approximately 1W at 100kHz. (5) Peak gate current: 2-4A for fast charging/discharging. The negative turn-off voltage is critical for preventing false turn-on due to high dv/dt (>50V/ns) during switching.
Contact our FAE team for SiC gate drive design and component selection.
What is the switching speed of BYD-SiC-1200V-80mΩ?
BYD-SiC-1200V-80mΩ switching characteristics: (1) Turn-on time: 20ns typical. (2) Turn-off time: 15ns typical (no tail current). (3) Rise time: 10ns typical. (4) Fall time: 8ns typical. (5) Maximum dv/dt: >50V/ns. (6) Maximum switching frequency: 100kHz+ for hard switching. The fast switching enables high-frequency operation, reducing passive component size and improving power density. However, fast switching requires careful PCB layout to minimize parasitic inductance.
Contact our FAE team for switching optimization and PCB layout guidelines.
How does BYD-SiC-1200V-80mΩ compare to silicon MOSFETs?
BYD-SiC-1200V-80mΩ advantages over silicon MOSFETs: (1) Higher voltage rating - 1200V vs typical 600-900V for silicon. (2) Lower switching losses - 1/10th of equivalent silicon device. (3) Higher switching frequency - 100kHz vs 20kHz for silicon. (4) Lower conduction losses at high temperature - positive temperature coefficient. (5) No reverse recovery - body diode has no reverse recovery charge. (6) Higher temperature operation - 175°C vs 150°C for silicon. These advantages enable higher efficiency, smaller size, and improved thermal performance.
Contact our FAE team for SiC vs silicon comparison and ROI analysis.
What is the RDS(on) temperature coefficient of BYD-SiC-1200V-80mΩ?
BYD-SiC-1200V-80mΩ RDS(on) characteristics: (1) 25°C: 80mΩ typical. (2) 125°C: 110mΩ typical (1.375x increase). (3) 175°C: 140mΩ typical (1.75x increase). The positive temperature coefficient is beneficial for parallel operation as current naturally balances between devices. This is in contrast to silicon MOSFETs which have higher temperature coefficients. The low temperature coefficient ensures consistent performance across the operating temperature range.
Contact our FAE team for conduction loss calculations across temperature range.
What PCB layout considerations are important for BYD-SiC-1200V-80mΩ?
PCB layout guidelines for BYD-SiC-1200V-80mΩ: (1) Minimize gate loop inductance - use short, wide traces (<20mm). (2) Use Kelvin source connection - connect gate drive return to source sense pin. (3) Minimize power loop inductance - use parallel planes or laminated busbars. (4) Place decoupling capacitors close to device - minimize loop area. (5) Use proper grounding - separate power and signal grounds. (6) Consider EMI - high dv/dt requires proper filtering. The TO-247-4 package's Kelvin source connection is essential for clean switching.
Contact our FAE team for PCB layout review and optimization.
Is BYD-SiC-1200V-80mΩ suitable for EV charging applications?
Yes, BYD-SiC-1200V-80mΩ is ideal for EV charging applications: (1) 1200V rating supports 800V EV platforms and 1000V DC bus. (2) Low switching losses enable high-frequency operation (50-100kHz), reducing passive component size. (3) High efficiency (>99%) reduces cooling requirements. (4) AEC-Q101 qualification ensures automotive reliability. (5) TO-247-4 package is compatible with standard heatsinks. (6) Proven in BYD's own EV charging infrastructure. The device is suitable for both onboard chargers and DC fast charging stations.
Contact our FAE team for EV charging design support and reference circuits.