CSJ60N30A
60V N-channel MOSFET with 2.8mΩ RDS(on), optimized for high-efficiency DC-DC converters and motor drives.
Product Overview
Description
60V N-channel MOSFET with ultra-low 2.8mΩ RDS(on). Advanced trench technology for high-efficiency switching.
TO-220 package with excellent thermal performance. Low gate charge (38nC) enables high-frequency operation up to 400kHz.
In stock for high-current DC-DC and motor drive applications. FAE support for thermal design and gate drive optimization.
Product Series
Low-Voltage
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | CSJ60N30A |
|---|---|
| Voltage | 60V |
| Current | 120A |
| Rds On | 2.8mΩ |
| Qg | 38nC |
| Package | TO-220 |
| Short Description | 60V N-channel MOSFET with 2.8mΩ RDS(on), optimized for high-efficiency DC-DC converters and motor drives. |
| Description Paragraphs | 60V N-channel MOSFET with ultra-low 2.8mΩ RDS(on). Advanced trench technology for high-efficiency switching.,TO-220 package with excellent thermal performance. Low gate charge (38nC) enables high-frequency operation up to 400kHz.,In stock for high-current DC-DC and motor drive applications. FAE support for thermal design and gate drive optimization. |
| Features | Advanced trench technology with 2.8mΩ RDS(on) typical,Low gate charge Qg = 38nC for efficient switching,High current capability: 120A continuous at 25°C,TO-220 package with RthJC = 0.7°C/W,Fast switching: tr = 12ns, tf = 10ns typical,100% avalanche tested for reliability |
| Applications | Synchronous rectification,DC-DC converters,Motor drives,Battery management,Power tools |
| Stock | In Stock |
| Moq | 100 |
| Lead Time | 1-2 weeks |
| Faqs | [object Object],[object Object],[object Object],[object Object],[object Object],[object Object] |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
| Companion Parts | COMP-A,COMP-B,COMP-C |
| Slug | csj60n30a |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"Good performance and reliability. Suitable for various industrial applications."
Reliable, good performance
— Senior FAE, LiTong Electronics
Frequently Asked Questions
What is the maximum switching frequency for CSJ60N30A?
CSJ60N30A supports switching frequencies up to 400kHz in hard-switching applications and up to 600kHz in soft-switching resonant converters. The low gate charge (Qg = 38nC) and fast switching times (tr = 12ns, tf = 10ns) enable efficient high-frequency operation. For optimal performance at high frequencies, use a gate driver with 4-6A peak current capability and minimize gate loop inductance.
Contact our FAE team for gate driver recommendations and PCB layout guidelines for high-frequency designs.
What is the thermal resistance of CSJ60N30A in TO-220 package?
CSJ60N30A in TO-220 package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.7°C/W. (2) Junction-to-ambient thermal resistance RthJA = 58°C/W (without heatsink). (3) Maximum junction temperature Tj(max) = 175°C. For continuous operation at 120A with 2.8mΩ RDS(on), the conduction loss is 40W, requiring a heatsink with thermal resistance of approximately 1.5°C/W or better to maintain junction temperature below 125°C at 25°C ambient.
Contact our FAE team for thermal simulation and heatsink selection guidance.
Can CSJ60N30A be used for 48V battery management systems?
Yes, CSJ60N30A is ideal for 48V battery management systems. Its 60V rating provides adequate voltage margin for 48V nominal systems (max 60V during charging). The ultra-low RDS(on) of 2.8mΩ minimizes conduction losses in high-current battery switches and protection circuits. The low gate charge enables fast switching for active balancing circuits. For BMS applications, the MOSFET's avalanche ruggedness provides protection against inductive kickback from battery cable inductance.
Contact our FAE team for BMS design support and protection circuit recommendations.
What is the avalanche energy rating of CSJ60N30A?
CSJ60N30A has a single-pulse avalanche energy rating of EAS = 450mJ at starting junction temperature of 25°C, with avalanche current IAR = 60A and clamped inductive load. This rating ensures the MOSFET can safely absorb energy from unclamped inductive switching transients. The device is 100% avalanche tested during production. For applications with frequent or high-energy inductive switching, additional external protection such as TVS diodes or RC snubbers is recommended.
Contact our FAE team for avalanche ruggedness testing data and inductive load protection design.
What gate drive voltage is recommended for CSJ60N30A?
CSJ60N30A is optimized for 10V gate drive (VGS = 10V) where it achieves the specified 2.8mΩ RDS(on). The MOSFET can also operate with 4.5V gate drive for compatibility with logic-level drivers, though RDS(on) increases to approximately 4.5mΩ. The gate threshold voltage VGS(th) is typically 2.2V with a range of 1.8V to 2.8V. For high-current applications, 10V gate drive is recommended to minimize conduction losses. The gate drive circuit should provide fast rise/fall times to minimize switching losses.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
How does CSJ60N30A compare to CSJ100N20A for motor drive applications?
CSJ60N30A and CSJ100N20A serve different voltage requirements in motor drives: (1) CSJ60N30A (60V) is ideal for 24V and 48V motor systems with lower RDS(on) of 2.8mΩ and higher current capability of 120A. (2) CSJ100N20A (100V) is suitable for higher voltage 48V and 72V systems with 3.5mΩ RDS(on) and 100A current. For 48V applications, CSJ60N30A offers lower conduction losses but less voltage margin, while CSJ100N20A provides more margin for voltage spikes. Both feature similar switching performance and thermal characteristics.
Contact our FAE team for motor drive MOSFET selection based on your specific voltage and current requirements.