IMW120R040M1H
High-quality mosfets component designed for reliable performance in industrial and commercial applications.
Product Overview
Description
The Infineon IMW120R040M1H is a 1200V silicon carbide (SiC) MOSFET from the CoolSiC family, designed.
This device leverages Infineon's advanced SiC technology to deliver exceptional performance compared.
With an on-resistance of only 40mΩ at 1200V rating, the IMW120R040M1H enables ultra-high efficiency .
Product Series
CoolSiC™
Primary Application
Solar Inverter, EV Charging, Industrial Power Supply
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | IMW120R040M1H |
|---|---|
| Voltage | 1200V |
| Rds On | 40mΩ |
| Current | 60A |
| Package | PG-TO-247-4 |
| Gate Charge | 45nC (typ) |
| Temperature | -55°C to +175°C |
| Stock | In Stock |
| Lead Time | Same day shipping |
| Long Description | The Infineon IMW120R040M1H is a 1200V silicon carbide (SiC) MOSFET from the CoolSiC family, designed for maximum efficiency and power density in demanding high-voltage applications. This device leverages Infineon's advanced SiC technology to deliver exceptional performance compared to traditional silicon MOSFETs and IGBTs. With an on-resistance of only 40mΩ at 1200V rating, the IMW120R040M1H enables ultra-high efficiency in applications such as solar inverters, EV charging stations, industrial power supplies, and uninterruptible power supplies (UPS). The SiC technology allows for much higher switching frequencies compared to silicon devices, enabling smaller passive components and higher power density. Key advantages include very low switching losses (Eon, Eoff), zero reverse recovery charge (Qrr = 0), body diode capability eliminating the need for external anti-parallel diodes, and operation at junction temperatures up to 175°C. The TO-247-4 package with Kelvin source connection minimizes gate loop inductance for optimal switching performance and reduced EMI. Typical applications include string solar inverters, DC fast chargers for electric vehicles, onboard chargers (OBC), telecom power supplies, and industrial motor drives. |
| Features | 1200V, 60A SiC MOSFET,Ultra-low Rds(on) = 40mΩ,Very low switching losses,Zero reverse recovery (Qrr = 0),Integrated body diode,Junction temperature up to 175°C,Kelvin source connection,High switching frequency capability,AEC-Q101 qualified,RoHS compliant |
| Seo Title | Infineon IMW120R040M1H CoolSiC MOSFET | 1200V 40mΩ | TO-247 | LiTong |
| Seo Description | IMW120R040M1H - Infineon CoolSiC 1200V MOSFET, 40mΩ, for solar inverter, EV charging. Highest efficiency. In stock. Contact: +86 15013702378 |
| Short Description | High-quality mosfets component designed for reliable performance in industrial and commercial applications. |
| Description Paragraphs | The Infineon IMW120R040M1H is a 1200V silicon carbide (SiC) MOSFET from the CoolSiC family, designed.,This device leverages Infineon's advanced SiC technology to deliver exceptional performance compared.,With an on-resistance of only 40mΩ at 1200V rating, the IMW120R040M1H enables ultra-high efficiency . |
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| Slug | imw120r040m1h |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"This MOSFET series has become my go-to recommendation for customers seeking high-efficiency power conversion. The low RDS(on) and excellent switching characteristics enable designers to achieve efficiency targets that were previously difficult. In server power supply applications, I've seen customers achieve 96%+ efficiency using these devices. The thermal performance is also impressive - even at high switching frequencies, the devices remain within safe operating temperatures with proper heat sinking."
Exceptional efficiency and thermal performance for power conversion applications
— David Liu, LiTong Electronics
Frequently Asked Questions
What are the main application scenarios for IMW120R040M1H?
IMW120R040M1H excels in high-frequency switching applications. Its 1200V voltage rating and low RDS(on) of 40mΩ make it ideal for DC-DC converters, motor drives, and power supplies. The PG-TO-247-4 package provides excellent thermal performance. The low gate charge enables high-frequency operation, allowing smaller passive components. Common applications include: synchronous rectification, motor control, battery management, and switching power supplies.
Contact our FAE team to evaluate IMW120R040M1H for your switching application and receive thermal design recommendations.
How does IMW120R040M1H compare to competing MOSFETs?
IMW120R040M1H stands out with its low RDS(on) of 40mΩ, which is competitive in its voltage class. This translates to lower conduction losses and higher efficiency. The gate charge of enables efficient high-frequency switching. Infineon Technologies's technology provides excellent Figure of Merit (FOM). The package offers superior thermal performance compared to standard packages. Additionally, Infineon Technologies's manufacturing quality and long-term availability commitment provide supply chain security.
Request a detailed comparison report including efficiency calculations for your specific operating conditions.
What are the key PCB layout considerations for IMW120R040M1H?
For optimal IMW120R040M1H performance: (1) Thermal management - use adequate copper area with thermal vias connecting to inner planes. This is critical for heat dissipation. (2) Gate drive - keep gate traces short and wide to minimize inductance. Use Kelvin connections for source sensing in high-current applications. (3) Decoupling - place ceramic capacitors close to the gate driver IC. (4) Current sensing - place sense resistor close to the source pin with dedicated traces. (5) Layout symmetry - maintain symmetrical layout in bridge configurations.
Download our reference PCB layout guide or contact our FAE team for layout review and thermal simulation support.
What are the recommended operating conditions for IMW120R040M1H?
IMW120R040M1H operates as a 1200V MOSFET with continuous drain current up to 60A at 25°C case temperature. The gate threshold voltage is typically 2-4V, with recommended gate drive voltage of 10V for full enhancement. The maximum junction temperature is 175°C, but for reliable operation, maintain Tj below 125°C. RDS(on) increases with temperature. The maximum pulsed drain current is typically 3-4 times the continuous rating. Always include safety margins in your design.
Review the complete datasheet for detailed electrical characteristics or contact our FAE team for application-specific derating recommendations.
What are common design issues with IMW120R040M1H and their solutions?
Common IMW120R040M1H design challenges: (1) Thermal runaway at high currents - caused by insufficient heat sinking. Solution: Implement proper thermal vias, use large copper pours. (2) Gate oscillations - due to long gate traces or inadequate gate resistance. Solution: Keep gate traces short, add appropriate gate resistor. (3) Voltage spikes during switching - caused by parasitic inductance. Solution: Minimize loop inductance, add snubber circuits if necessary. (4) False triggering in high-side applications - due to dV/dt. Solution: Use negative gate drive, add Miller clamp circuit.
Contact our technical support team for design review services or access our application notes library.
How to select gate driver and design gate drive circuit for IMW120R040M1H?
For optimal IMW120R040M1H performance, gate driver selection is critical: (1) Drive capability - choose a driver that can provide sufficient peak current to charge/discharge the gate charge quickly. (2) UVLO protection - ensure the driver has undervoltage lockout. (3) Dead-time control - in bridge applications, implement adequate dead-time to prevent shoot-through. (4) Bootstrap circuit - for high-side drivers, use proper bootstrap components. (5) Gate resistor - select appropriate value to control switching speed and reduce EMI. (6) Decoupling - place capacitors close to the driver supply pins.
Contact our FAE team for gate driver recommendations or request reference designs for your specific topology.