MMO100N060Y1
MacMic MMO100N060Y1 60V 100A MOSFET module with ultra-low 2.5mΩ RDS(on). Ideal for synchronous rectification in high-...
Product Overview
Description
The MacMic MMO100N060Y1 is a high-performance 60V 100A MOSFET module featuring ultra-low RDS(on) of 2.5mΩ typical, designed for high-efficiency synchronous rectification.
With low gate charge and fast switching characteristics, this Y1 package module delivers excellent performance in high-frequency DC-DC converters and SMPS applications.
The compact Y1 package provides excellent thermal performance and is optimized for synchronous rectifier applications requiring high current with minimal losses.
Product Series
MOSFET Module
Primary Application
Synchronous Rectification, DC-DC Converters, SMPS
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | MMO100N060Y1 |
|---|---|
| Voltage | 60V |
| Current | 100A |
| Package | Y1 |
| Rds On | 2.5mΩ (typ) |
| Stock | In Stock |
| Lead Time | Same day shipping |
| Short Description | MacMic MMO100N060Y1 60V 100A MOSFET module with ultra-low 2.5mΩ RDS(on). Ideal for synchronous rectification in high-... |
| Description Paragraphs | The MacMic MMO100N060Y1 is a high-performance 60V 100A MOSFET module featuring ultra-low RDS(on) of 2.5mΩ typical, designed for high-efficiency synchronous rectification.,With low gate charge and fast switching characteristics, this Y1 package module delivers excellent performance in high-frequency DC-DC converters and SMPS applications.,The compact Y1 package provides excellent thermal performance and is optimized for synchronous rectifier applications requiring high current with minimal losses. |
| Long Description | The MacMic MMO100N060Y1 is a high-current MOSFET module designed specifically for synchronous rectification applications. Featuring ultra-low RDS(on) of 2.5mΩ typical, this module minimizes conduction losses in high-current power supplies. The 60V voltage rating is ideal for 12V, 24V, and 48V output rectifiers, while the 100A current rating supports high-power applications. Low gate charge enables fast switching with minimal drive power requirements. The Y1 package is optimized for synchronous rectifier applications, providing excellent thermal performance and low parasitic inductance. This module is particularly well-suited for server power supplies, telecom rectifiers, and high-current DC-DC converters where efficiency is critical. |
| Features | Ultra-low RDS(on): 2.5mΩ typical,60V voltage rating for low-voltage rectification,100A current rating,Low gate charge for fast switching,Optimized for synchronous rectification,Compact Y1 package,Excellent thermal performance,RoHS compliant |
| Applications | Synchronous rectification,Server power supplies,Telecom rectifiers,DC-DC converters,High-current SMPS,Battery charging systems |
| Specifications | [object Object] |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
| Companion Parts | COMP-A,COMP-B,COMP-C |
| Image | /assets/brands/macmic/images/products/mmo100n060y1.jpg |
| Faqs | [object Object],[object Object],[object Object],[object Object],[object Object],[object Object] |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"The MMO100N060Y1 is an excellent choice for high-current synchronous rectification. The 2.5mΩ RDS(on) is genuinely low - I've measured it in actual applications and it delivers the expected efficiency improvements. In a 48V/50A server power supply design, replacing traditional diode rectifiers with these MOSFETs improved efficiency by 3-4%. Key insight: gate drive design is critical for synchronous rectifiers - you need fast turn-on and precise timing to avoid shoot-through. I recommend using dedicated synchronous rectifier controllers with proper dead-time control. Thermal design is also important - while the Y1 package has good thermal characteristics, at 100A continuous you need proper heat sinking. I typically see 40-50W conduction losses at full load, so plan your thermal design accordingly."
Ultra-low 2.5mΩ RDS(on) enables 3-4% efficiency improvement in high-current rectifiers
— Michael Wang, LiTong Electronics
Frequently Asked Questions
What are the main application scenarios for MMO100N060Y1?
MMO100N060Y1 excels in high-frequency switching applications. Its 60V voltage rating and low RDS(on) of 2.5mΩ (typ) make it ideal for DC-DC converters, motor drives, and power supplies. The Y1 package provides excellent thermal performance. The low gate charge enables high-frequency operation, allowing smaller passive components. Common applications include: synchronous rectification, motor control, battery management, and switching power supplies.
Contact our FAE team to evaluate MMO100N060Y1 for your switching application and receive thermal design recommendations.
How does MMO100N060Y1 compare to competing MOSFETs?
MMO100N060Y1 stands out with its low RDS(on) of 2.5mΩ (typ), which is competitive in its voltage class. This translates to lower conduction losses and higher efficiency. The gate charge of enables efficient high-frequency switching. MacMic Science & Technology's technology provides excellent Figure of Merit (FOM). The package offers superior thermal performance compared to standard packages. Additionally, MacMic Science & Technology's manufacturing quality and long-term availability commitment provide supply chain security.
Request a detailed comparison report including efficiency calculations for your specific operating conditions.
What are the key PCB layout considerations for MMO100N060Y1?
For optimal MMO100N060Y1 performance: (1) Thermal management - use adequate copper area with thermal vias connecting to inner planes. This is critical for heat dissipation. (2) Gate drive - keep gate traces short and wide to minimize inductance. Use Kelvin connections for source sensing in high-current applications. (3) Decoupling - place ceramic capacitors close to the gate driver IC. (4) Current sensing - place sense resistor close to the source pin with dedicated traces. (5) Layout symmetry - maintain symmetrical layout in bridge configurations.
Download our reference PCB layout guide or contact our FAE team for layout review and thermal simulation support.
What are the recommended operating conditions for MMO100N060Y1?
MMO100N060Y1 operates as a 60V MOSFET with continuous drain current up to 100A at 25°C case temperature. The gate threshold voltage is typically 2-4V, with recommended gate drive voltage of 10V for full enhancement. The maximum junction temperature is 175°C, but for reliable operation, maintain Tj below 125°C. RDS(on) increases with temperature. The maximum pulsed drain current is typically 3-4 times the continuous rating. Always include safety margins in your design.
Review the complete datasheet for detailed electrical characteristics or contact our FAE team for application-specific derating recommendations.
What are common design issues with MMO100N060Y1 and their solutions?
Common MMO100N060Y1 design challenges: (1) Thermal runaway at high currents - caused by insufficient heat sinking. Solution: Implement proper thermal vias, use large copper pours. (2) Gate oscillations - due to long gate traces or inadequate gate resistance. Solution: Keep gate traces short, add appropriate gate resistor. (3) Voltage spikes during switching - caused by parasitic inductance. Solution: Minimize loop inductance, add snubber circuits if necessary. (4) False triggering in high-side applications - due to dV/dt. Solution: Use negative gate drive, add Miller clamp circuit.
Contact our technical support team for design review services or access our application notes library.
How to select gate driver and design gate drive circuit for MMO100N060Y1?
For optimal MMO100N060Y1 performance, gate driver selection is critical: (1) Drive capability - choose a driver that can provide sufficient peak current to charge/discharge the gate charge quickly. (2) UVLO protection - ensure the driver has undervoltage lockout. (3) Dead-time control - in bridge applications, implement adequate dead-time to prevent shoot-through. (4) Bootstrap circuit - for high-side drivers, use proper bootstrap components. (5) Gate resistor - select appropriate value to control switching speed and reduce EMI. (6) Decoupling - place capacitors close to the driver supply pins.
Contact our FAE team for gate driver recommendations or request reference designs for your specific topology.