MMO200N040Y1
MacMic MMO200N040Y1 40V 200A MOSFET module with ultra-low 1.2mΩ RDS(on). Designed for ultra-high current synchronous ...
Product Overview
Description
The MacMic MMO200N040Y1 is an ultra-high current 40V 200A MOSFET module featuring industry-leading RDS(on) of 1.2mΩ typical.
Designed for the most demanding synchronous rectification applications, this Y1 package module delivers exceptional efficiency in high-current power supplies and battery charging systems.
The 40V rating is optimized for 12V and 24V output applications, while the 200A current capability supports the highest power density designs.
Product Series
MOSFET Module
Primary Application
High-Current Synchronous Rectification, Battery Charging, Welding Supplies
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | MMO200N040Y1 |
|---|---|
| Voltage | 40V |
| Current | 200A |
| Package | Y1 |
| Rds On | 1.2mΩ (typ) |
| Stock | In Stock |
| Lead Time | Same day shipping |
| Short Description | MacMic MMO200N040Y1 40V 200A MOSFET module with ultra-low 1.2mΩ RDS(on). Designed for ultra-high current synchronous ... |
| Description Paragraphs | The MacMic MMO200N040Y1 is an ultra-high current 40V 200A MOSFET module featuring industry-leading RDS(on) of 1.2mΩ typical.,Designed for the most demanding synchronous rectification applications, this Y1 package module delivers exceptional efficiency in high-current power supplies and battery charging systems.,The 40V rating is optimized for 12V and 24V output applications, while the 200A current capability supports the highest power density designs. |
| Long Description | The MacMic MMO200N040Y1 represents the pinnacle of MOSFET module technology for synchronous rectification. With ultra-low RDS(on) of just 1.2mΩ typical and 200A current rating, this module enables unprecedented efficiency in high-current power conversion applications. The 40V voltage rating is specifically optimized for 12V and 24V output rectifiers commonly found in server power supplies, battery charging systems, and welding equipment. Advanced chip technology minimizes both conduction and switching losses, while the Y1 package provides excellent thermal performance for continuous high-current operation. This module is ideal for applications requiring the highest power density and efficiency, such as data center power supplies, industrial battery chargers, and high-current welding power sources. |
| Features | Ultra-low RDS(on): 1.2mΩ typical - industry leading,Ultra-high current: 200A continuous rating,40V voltage rating for 12V/24V applications,Optimized for synchronous rectification,Low gate charge for efficient switching,High power density Y1 package,Excellent thermal performance,RoHS compliant |
| Applications | High-current synchronous rectification,Data center power supplies,Industrial battery chargers,High-current welding supplies,Telecom power systems,Electric vehicle charging |
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| Companion Parts | COMP-A,COMP-B,COMP-C |
| Image | /assets/brands/macmic/images/products/mmo200n040y1.jpg |
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Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"The MMO200N040Y1 is simply outstanding for high-current applications. The 1.2mΩ RDS(on) is the lowest I've seen in this package size. In a 12V/200A industrial battery charger design, we achieved 98.5% rectifier efficiency using these modules - that's 2-3% better than competing solutions. At 200A, conduction losses are about 48W, so thermal design is critical. I recommend forced air cooling or liquid cooling for continuous operation at full current. Gate drive requirements are significant at 120nC gate charge - use a 4A+ gate driver for fast switching. One important consideration: layout is critical at these currents. Minimize parasitic inductance in the source path to avoid voltage spikes during switching. Use wide, short traces and proper decoupling."
Industry-leading 1.2mΩ RDS(on) enables 98.5% rectifier efficiency in high-current applications
— Robert Liu, LiTong Electronics
Frequently Asked Questions
What are the main application scenarios for MMO200N040Y1?
MMO200N040Y1 excels in high-frequency switching applications. Its 40V voltage rating and low RDS(on) of 1.2mΩ (typ) make it ideal for DC-DC converters, motor drives, and power supplies. The Y1 package provides excellent thermal performance. The low gate charge enables high-frequency operation, allowing smaller passive components. Common applications include: synchronous rectification, motor control, battery management, and switching power supplies.
Contact our FAE team to evaluate MMO200N040Y1 for your switching application and receive thermal design recommendations.
How does MMO200N040Y1 compare to competing MOSFETs?
MMO200N040Y1 stands out with its low RDS(on) of 1.2mΩ (typ), which is competitive in its voltage class. This translates to lower conduction losses and higher efficiency. The gate charge of enables efficient high-frequency switching. MacMic Science & Technology's technology provides excellent Figure of Merit (FOM). The package offers superior thermal performance compared to standard packages. Additionally, MacMic Science & Technology's manufacturing quality and long-term availability commitment provide supply chain security.
Request a detailed comparison report including efficiency calculations for your specific operating conditions.
What are the key PCB layout considerations for MMO200N040Y1?
For optimal MMO200N040Y1 performance: (1) Thermal management - use adequate copper area with thermal vias connecting to inner planes. This is critical for heat dissipation. (2) Gate drive - keep gate traces short and wide to minimize inductance. Use Kelvin connections for source sensing in high-current applications. (3) Decoupling - place ceramic capacitors close to the gate driver IC. (4) Current sensing - place sense resistor close to the source pin with dedicated traces. (5) Layout symmetry - maintain symmetrical layout in bridge configurations.
Download our reference PCB layout guide or contact our FAE team for layout review and thermal simulation support.
What are the recommended operating conditions for MMO200N040Y1?
MMO200N040Y1 operates as a 40V MOSFET with continuous drain current up to 200A at 25°C case temperature. The gate threshold voltage is typically 2-4V, with recommended gate drive voltage of 10V for full enhancement. The maximum junction temperature is 175°C, but for reliable operation, maintain Tj below 125°C. RDS(on) increases with temperature. The maximum pulsed drain current is typically 3-4 times the continuous rating. Always include safety margins in your design.
Review the complete datasheet for detailed electrical characteristics or contact our FAE team for application-specific derating recommendations.
What are common design issues with MMO200N040Y1 and their solutions?
Common MMO200N040Y1 design challenges: (1) Thermal runaway at high currents - caused by insufficient heat sinking. Solution: Implement proper thermal vias, use large copper pours. (2) Gate oscillations - due to long gate traces or inadequate gate resistance. Solution: Keep gate traces short, add appropriate gate resistor. (3) Voltage spikes during switching - caused by parasitic inductance. Solution: Minimize loop inductance, add snubber circuits if necessary. (4) False triggering in high-side applications - due to dV/dt. Solution: Use negative gate drive, add Miller clamp circuit.
Contact our technical support team for design review services or access our application notes library.
How to select gate driver and design gate drive circuit for MMO200N040Y1?
For optimal MMO200N040Y1 performance, gate driver selection is critical: (1) Drive capability - choose a driver that can provide sufficient peak current to charge/discharge the gate charge quickly. (2) UVLO protection - ensure the driver has undervoltage lockout. (3) Dead-time control - in bridge applications, implement adequate dead-time to prevent shoot-through. (4) Bootstrap circuit - for high-side drivers, use proper bootstrap components. (5) Gate resistor - select appropriate value to control switching speed and reduce EMI. (6) Decoupling - place capacitors close to the driver supply pins.
Contact our FAE team for gate driver recommendations or request reference designs for your specific topology.