SCTW90N65G2V
650V SiC MOSFET with 90A current rating, 22mΩ typical Rds(on), and excellent switching performance for high-efficiency power conversion applications.
Product Overview
Description
The SCTW90N65G2V is a cutting-edge silicon carbide (SiC) power MOSFET from ST's advanced SiC portfolio.
With 650V voltage rating and ultra-low 22mΩ Rds(on), it delivers exceptional efficiency and power density for demanding applications.
The device enables high-frequency operation (100kHz+) with reduced switching losses, ideal for EV chargers, solar inverters, and server power supplies.
Product Series
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | SCTW90N65G2V |
|---|---|
| Name | 650V Silicon Carbide Power MOSFET |
| Short Description | 650V SiC MOSFET with 90A current rating, 22mΩ typical Rds(on), and excellent switching performance for high-efficiency power conversion applications. |
| Description Paragraphs | The SCTW90N65G2V is a cutting-edge silicon carbide (SiC) power MOSFET from ST's advanced SiC portfolio.,With 650V voltage rating and ultra-low 22mΩ Rds(on), it delivers exceptional efficiency and power density for demanding applications.,The device enables high-frequency operation (100kHz+) with reduced switching losses, ideal for EV chargers, solar inverters, and server power supplies. |
| Specifications | [object Object] |
| Features | Advanced SiC MOSFET technology,Ultra-low Rds(on) × area figure of merit,High switching frequency capability (100kHz+),Low gate charge and capacitance,Excellent body diode performance,Operating temperature: -55°C to +175°C |
| Applications | EV onboard chargers,DC-DC converters for EV/HEV,Solar inverters,Server and telecom power supplies,High-efficiency industrial drives |
| Fae Review | [object Object] |
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Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"The SCTW90N65G2V represents the state-of-the-art in SiC power technology. In my experience with EV charger designs, this device enables 98%+ efficiency that simply isn't achievable with silicon MOSFETs or IGBTs. The ability to switch at 100kHz+ allows dramatic reduction in magnetic component size. I've seen customers reduce heatsink volume by 50% compared to IGBT solutions. The body diode characteristics are excellent with no reverse recovery, eliminating the need for external freewheeling diodes in many applications. While the initial cost is higher than silicon, the system-level savings in cooling and magnetics often justify the investment. ST's 25+ years of SiC experience shows in the device reliability."
Revolutionary efficiency for next-generation power systems
— James Liu, LiTong Electronics
Frequently Asked Questions
What are the key advantages of SiC MOSFETs over silicon devices?
SiC MOSFETs offer transformative advantages: 1) Lower switching losses enabling operation at 3-5x higher frequencies than silicon, reducing magnetic component size. 2) Lower Rds(on) for given die size, improving conduction efficiency. 3) Higher temperature capability (175°C+ vs 150°C), enabling higher power density. 4) Zero reverse recovery charge in body diode, eliminating switching losses from diode recovery. 5) Stable switching characteristics over temperature. These advantages translate to smaller, lighter, and more efficient power systems, particularly important for EV and renewable energy applications.
Consider SiC for applications above 650V where efficiency and power density are critical.
What gate drive requirements are specific to SiC MOSFETs?
SiC MOSFETs require careful gate drive design: Recommended Vgs(on) is 18V for lowest Rds(on), with absolute maximum of +22V. Turn-off should reach -2V to -5V for fastest switching and noise immunity. The gate threshold is lower than silicon (typically 2.5-3V), requiring careful layout to prevent dv/dt induced turn-on. Use kelvin source connection (4-pin packages) to eliminate source inductance effects. Gate resistors affect switching speed and EMI - typically 5-10Ω for turn-on and 2-5Ω for turn-off. Isolated gate drivers with Miller clamp protection are recommended.
Use isolated gate drivers designed for SiC with proper voltage levels and Miller clamp.
How does temperature affect SiC MOSFET performance?
SiC MOSFETs exhibit positive temperature coefficient for Rds(on) like silicon MOSFETs, but the increase is more gradual. Rds(on) typically increases 1.2x-1.4x from 25°C to 175°C compared to 1.5x-2x for silicon. Threshold voltage decreases slightly with temperature (about -5mV/°C), requiring consideration for high-temperature operation. Switching characteristics remain more stable over temperature compared to silicon. The higher maximum junction temperature (175-200°C) enables higher power density or improved reliability through derating.
SiC devices offer better thermal performance. Leverage higher temperature capability for improved system design.
Can I use the body diode for freewheeling in bridge configurations?
Yes, the SCTW90N65G2V body diode is rated for continuous current and can be used for freewheeling in bridge topologies. Key advantages over silicon: No reverse recovery charge (Qrr ≈ 0), eliminating switching losses associated with diode recovery. Low forward voltage at high temperature (Vsd increases with temperature unlike silicon). However, the body diode has higher forward drop than external SiC Schottky diodes (3-4V vs 1.5V). For highest efficiency, external SiC Schottky diodes are still preferred for continuous operation, but the body diode is excellent for dead-time commutation.
Body diode is suitable for dead-time commutation. Use external SiC Schottky for continuous freewheeling in PFC applications.
What is the typical switching frequency for SiC MOSFET applications?
SiC MOSFETs enable switching frequencies of 50kHz to 200kHz+ depending on topology and power level. Hard-switching applications (buck, boost, half-bridge) typically operate at 50-100kHz. Resonant and soft-switching topologies (LLC, PSFB) can operate at 100-300kHz or higher. The optimal frequency balances switching losses, magnetic component size, and EMI considerations. At 100kHz+, SiC maintains high efficiency while enabling 2-3x reduction in inductor and transformer size compared to 20-30kHz silicon IGBT designs.
Start with 50-100kHz for hard-switching. Increase frequency as magnetic design allows.
How do I handle EMI with high-speed SiC switching?
High-speed SiC switching requires careful EMI management: Use gate resistors to control dv/dt (typically 5-10Ω). Implement proper snubber circuits for voltage overshoot control. Minimize loop inductance in power circuits with tight layout. Use shielded gate drive transformers or isolated gate drivers with integrated isolation. Implement common-mode filtering at input and output. Consider soft-switching topologies that naturally reduce EMI. The faster switching generates higher frequency EMI content, requiring attention to PCB layout and filtering above 30MHz.
Invest in proper PCB layout and filtering. The EMI benefits of soft-switching often justify topology selection.