STW48N60M2
600V MDmesh M2 series power MOSFET with 48A current rating, 45mΩ typical Rds(on), and excellent switching performance for power supplies and inverters.
Product Overview
Description
The STW48N60M2 is a high-voltage N-channel power MOSFET utilizing ST's advanced MDmesh M2 super-junction technology.
With 600V voltage rating and ultra-low 45mΩ Rds(on), it delivers exceptional efficiency in hard-switching applications.
The device features excellent dv/dt ruggedness, 100% avalanche tested, and is ideal for switched-mode power supplies and solar inverters.
Product Series
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | STW48N60M2 |
|---|---|
| Name | 600V N-Channel Power MOSFET |
| Short Description | 600V MDmesh M2 series power MOSFET with 48A current rating, 45mΩ typical Rds(on), and excellent switching performance for power supplies and inverters. |
| Description Paragraphs | The STW48N60M2 is a high-voltage N-channel power MOSFET utilizing ST's advanced MDmesh M2 super-junction technology.,With 600V voltage rating and ultra-low 45mΩ Rds(on), it delivers exceptional efficiency in hard-switching applications.,The device features excellent dv/dt ruggedness, 100% avalanche tested, and is ideal for switched-mode power supplies and solar inverters. |
| Specifications | [object Object] |
| Features | MDmesh M2 super-junction technology,Ultra-low Rds(on) × area figure of merit,Excellent switching performance,100% avalanche tested,High dv/dt ruggedness,Operating temperature: -55°C to +150°C |
| Applications | Switched-mode power supplies,Solar inverters,UPS systems,Motor drives,EV charging stations |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
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Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"The STW48N60M2 has been my go-to recommendation for 600V power supply applications. The MDmesh M2 technology delivers exceptional Rds(on) performance that rivals competitors' newer generations. In my experience, the switching characteristics are well-balanced with moderate Qg, making it suitable for both hard-switching and resonant topologies. I've successfully deployed this device in numerous server power supplies where efficiency certification is critical. The TO-247 package provides excellent thermal performance with proper heatsinking. For cost-sensitive designs, this device offers the best value proposition in the 600V class. The avalanche ruggedness adds reliability margin for inductive load applications."
Best-in-class Rds(on) with proven reliability
— Robert Kim, LiTong Electronics
Frequently Asked Questions
What is the maximum junction temperature for STW48N60M2?
The STW48N60M2 has a maximum junction temperature of 150°C. The device is rated for continuous operation at full current up to Tc = 100°C case temperature. For reliable long-term operation, it's recommended to maintain junction temperature below 125°C. The thermal resistance Rth(j-case) is 0.42°C/W, allowing calculation of junction temperature based on power dissipation and case temperature. Proper heatsinking is essential for high-current applications to keep junction temperature within safe limits.
Ensure adequate heatsinking for your application. Contact us for thermal design assistance.
How do I calculate conduction losses for STW48N60M2?
Conduction losses are calculated using Pcond = I² × Rds(on) × D, where I is RMS current and D is duty cycle. At 25°C, use Rds(on) = 45mΩ typical. At elevated temperatures, Rds(on) increases approximately 1.5x-2x at 125°C. For example, at 20A RMS current with 50% duty cycle: Pcond = 20² × 0.045 × 0.5 = 9W at 25°C. Account for temperature rise in thermal calculations. The datasheet provides normalized Rds(on) vs temperature curves for accurate calculations.
Use worst-case Rds(on) at maximum operating temperature for conservative loss calculations.
What is the avalanche rating of STW48N60M2?
The STW48N60M2 is 100% avalanche tested with an Energy Single Pulse (EAS) rating of 800mJ at 25°C. This means the device can safely absorb 800mJ of energy in an unclamped inductive switching event at rated current. The device is rated for repetitive avalanche with Energy Repetitive (EAR) of 40mJ. Avalanche capability provides protection margin for inductive load switching and improves system reliability. Always ensure external clamping circuits limit avalanche energy within device ratings.
Include proper snubber circuits for inductive loads. The avalanche rating provides safety margin.
Can STW48N60M2 be used for soft-switching applications?
Yes, the STW48N60M2 is suitable for soft-switching topologies including LLC resonant converters and phase-shifted full bridges. The moderate gate charge (Qg = 105nC) and excellent body diode characteristics make it well-suited for these applications. The body diode has fast reverse recovery (trr < 200ns) and low reverse recovery charge (Qrr), minimizing switching losses in soft-switching conditions. For ZVS (Zero Voltage Switching) applications, the output capacitance (Coss) affects the resonant tank design.
Verify switching characteristics match your resonant frequency requirements.
What is the recommended gate drive voltage for STW48N60M2?
The STW48N60M2 should be driven with 10V gate-source voltage for optimal performance. At Vgs = 10V, the device achieves its specified Rds(on). While the device will turn on at lower voltages (Vgs(th) = 3-4V), insufficient gate drive increases Rds(on) and conduction losses. For high-reliability applications, use 12-15V gate drive with proper Miller clamp protection. The gate charge characteristics show Qg(total) = 105nC at Vgs = 10V, which should be considered in gate driver selection.
Use 10-12V gate drive for optimal performance. Include negative turn-off voltage for fastest switching.
How does MDmesh M2 technology compare to competitors?
ST's MDmesh M2 super-junction technology offers competitive performance with excellent reliability. Compared to competitors' similar generation devices, MDmesh M2 provides comparable Rds(on) × Qg figure of merit with proven ruggedness. ST's technology features stable threshold voltage over temperature and excellent body diode characteristics. The M2 generation represents a mature, well-characterized technology with extensive field experience. Newer MDmesh M5 and M6 generations offer improved performance for new designs.
MDmesh M2 offers proven reliability. Consider M5/M6 for new designs requiring highest efficiency.