GD100HFL120C2S
1200V 100A IGBT module with 1.75V VCE(sat), designed for high-power industrial drives and renewable energy.
Product Overview
Description
1200V 100A half-bridge IGBT module with trench field-stop technology. Low 1.75V VCE(sat) for high-efficiency operation.
62mm standard package with excellent thermal performance. Optimized for switching frequencies up to 15kHz.
In stock for high-power industrial and renewable energy applications. FAE support for thermal design and system optimization.
Product Series
1200V
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | GD100HFL120C2S |
|---|---|
| Voltage | 1200V |
| Current | 100A |
| Vce Sat | 1.75V |
| Eon Eoff | 6.5mJ |
| Package | 62mm |
| Short Description | 1200V 100A IGBT module with 1.75V VCE(sat), designed for high-power industrial drives and renewable energy. |
| Description Paragraphs | 1200V 100A half-bridge IGBT module with trench field-stop technology. Low 1.75V VCE(sat) for high-efficiency operation.,62mm standard package with excellent thermal performance. Optimized for switching frequencies up to 15kHz.,In stock for high-power industrial and renewable energy applications. FAE support for thermal design and system optimization. |
| Features | Trench field-stop technology with 1.75V VCE(sat) typical,Low switching losses: Eon = 3.2mJ, Eoff = 3.3mJ,High current capability: 100A continuous at 80°C,62mm package with RthJC = 0.35K/W,10μs short-circuit withstand time,Built-in fast recovery anti-parallel diode |
| Applications | Industrial motor drives,Solar inverters,EV charging,UPS systems,Wind power |
| Stock | In Stock |
| Moq | 10 |
| Lead Time | 2-3 weeks |
| Faqs | [object Object],[object Object],[object Object],[object Object],[object Object],[object Object] |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
| Companion Parts | COMP-A,COMP-B,COMP-C |
| Slug | gd100hfl120c2s |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"Good performance and reliability. Suitable for various industrial applications."
Reliable, good performance
— Senior FAE, LiTong Electronics
Frequently Asked Questions
What is the recommended gate drive voltage for GD100HFL120C2S?
GD100HFL120C2S is optimized for +15V turn-on and -8V turn-off gate drive: (1) +15V VGE(on) ensures low VCE(sat) and minimizes conduction losses. (2) -8V negative turn-off voltage prevents false turn-on due to dv/dt and Miller effect. (3) Gate resistor selection affects switching speed and EMI - typical values are 10-22Ω for turn-on and 8-15Ω for turn-off. The gate drive should provide 4-6A peak current for fast switching of the larger die size. Starpower provides recommended gate drive circuits and PCB layout guidelines.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
What is the thermal resistance of GD100HFL120C2S?
GD100HFL120C2S in 62mm package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.35K/W (IGBT) and 0.65K/W (diode). (2) Maximum junction temperature Tj(max) = 150°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +125°C. For continuous operation at 100A with 1.75V VCE(sat), the conduction loss is 175W, requiring a heatsink with thermal resistance of approximately 0.2K/W or better to maintain junction temperature below 125°C at 40°C ambient. Forced air cooling or liquid cooling is typically required for this power level.
Contact our FAE team for thermal simulation and cooling system design.
Can GD100HFL120C2S be used for solar inverter applications?
Yes, GD100HFL120C2S is well-suited for solar inverter applications. Its characteristics make it ideal for this demanding application: (1) 1200V rating supports 480V AC three-phase inverters and 1000V DC string inverters. (2) 100A current rating supports inverters up to 50-75kW. (3) Optimized switching losses enable 16kHz operation for compact filter design. (4) 10μs short-circuit withstand provides reliable protection during grid faults. (5) Positive temperature coefficient allows easy parallel operation for higher power ratings. The 62mm package is widely used in solar inverter designs.
Contact our FAE team for solar inverter design support and MPPT optimization.
What is the short-circuit withstand time of GD100HFL120C2S?
GD100HFL120C2S has a short-circuit withstand time (tSC) of 10μs minimum at VGE = 15V, VCC = 800V, and starting Tj = 125°C. This specification ensures reliable protection during output short-circuit conditions. The IGBT desaturation detection circuit should detect the fault and turn off the IGBT within 10μs to prevent device damage. Starpower recommends using gate drivers with integrated desaturation protection for reliable short-circuit protection. The module's larger die size provides robust short-circuit capability.
Contact our FAE team for short-circuit protection circuit design and desaturation detection implementation.
What is the diode recovery characteristics of the built-in anti-parallel diode?
GD100HFL120C2S's built-in anti-parallel diode features: (1) Fast reverse recovery time trr = 150ns typical at IF = 50A. (2) Soft recovery characteristics to minimize voltage overshoot and EMI. (3) Low forward voltage VF = 1.85V typical at IF = 50A. (4) Reverse recovery charge Qrr = 2.5μC typical. These characteristics make the diode suitable for high-frequency freewheeling applications in inverter bridges. The soft recovery minimizes dv/dt stress on the complementary IGBT and reduces EMI filtering requirements. The diode is rated for the same current as the IGBT for reliable operation.
Contact our FAE team for diode recovery characteristics data and snubber circuit design.
How does GD100HFL120C2S compare to GD50HFL120C1S?
GD100HFL120C2S and GD50HFL120C1S serve different power levels in 1200V applications: (1) GD100HFL120C2S (100A, 62mm) is designed for higher power applications (30-75kW) with lower RthJC (0.35K/W vs 0.65K/W). (2) GD50HFL120C1S (50A, 34mm) is suitable for lower power applications (15-30kW) with more compact package. Both feature similar VCE(sat) (~1.7V) and switching characteristics. The 62mm package has better thermal performance but requires larger heatsink. For parallel operation, GD100HFL120C2S is preferred due to better current sharing characteristics.
Contact our FAE team for IGBT module selection based on your specific power and thermal requirements.