GDM100N80
80V 150A MOSFET module with 3.2mΩ RDS(on), ideal for industrial DC-DC and motor applications.
Product Overview
Description
80V 150A MOSFET module with 3.2mΩ RDS(on). Advanced trench technology for high-efficiency switching.
EasyPACK package with excellent thermal performance and low parasitic inductance. Supports switching up to 100kHz.
In stock for industrial power applications. FAE support for gate drive and thermal design.
Product Series
80V
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | GDM100N80 |
|---|---|
| Voltage | 80V |
| Current | 150A |
| Rds On | 3.2mΩ |
| Qg | 120nC |
| Package | EasyPACK |
| Short Description | 80V 150A MOSFET module with 3.2mΩ RDS(on), ideal for industrial DC-DC and motor applications. |
| Description Paragraphs | 80V 150A MOSFET module with 3.2mΩ RDS(on). Advanced trench technology for high-efficiency switching.,EasyPACK package with excellent thermal performance and low parasitic inductance. Supports switching up to 100kHz.,In stock for industrial power applications. FAE support for gate drive and thermal design. |
| Features | Advanced trench MOSFET with 3.2mΩ RDS(on) at 25°C,Low gate charge Qg = 120nC for fast switching,High current capability: 150A continuous at 25°C case,EasyPACK package with RthJC = 0.6K/W,Fast switching: tr = 20ns, tf = 12ns typical,Low parasitic inductance for clean switching |
| Applications | Industrial DC-DC,Motor drives,Power supplies,Battery systems,Welding equipment |
| Stock | In Stock |
| Moq | 10 |
| Lead Time | 2-3 weeks |
| Faqs | [object Object],[object Object],[object Object],[object Object],[object Object],[object Object] |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
| Companion Parts | COMP-A,COMP-B,COMP-C |
| Slug | gdm100n80 |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"Good performance and reliability. Suitable for various industrial applications."
Reliable, good performance
— Senior FAE, LiTong Electronics
Frequently Asked Questions
What is the recommended gate drive voltage for GDM100N80?
GDM100N80 is optimized for 10V gate drive (VGS = 10V) where it achieves the specified 3.2mΩ RDS(on). The MOSFET can also operate with 4.5V gate drive for compatibility with logic-level drivers, though RDS(on) increases to approximately 5mΩ. The gate threshold voltage VGS(th) is typically 2.2V. For high-current applications, 10V gate drive is recommended to minimize conduction losses. The gate drive circuit should provide fast rise/fall times to minimize switching losses. Gate resistor values of 3-6Ω are typical for this module.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
What is the thermal resistance of GDM100N80?
GDM100N80 in EasyPACK package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.6K/W. (2) Maximum junction temperature Tj(max) = 175°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +150°C. For continuous operation at 150A with 3.2mΩ RDS(on), the conduction loss is 72W, requiring a heatsink with thermal resistance of approximately 0.5K/W or better to maintain junction temperature below 125°C at 40°C ambient. Forced air cooling is recommended for continuous operation at full current.
Contact our FAE team for thermal simulation and heatsink selection guidance.
Can GDM100N80 be used for 72V EV auxiliary systems?
Yes, GDM100N80 is well-suited for 72V EV auxiliary systems. Its characteristics make it ideal for this application: (1) 80V rating provides adequate margin for 72V nominal systems with voltage transients. (2) 150A current rating supports high-power auxiliary drives such as HVAC compressors and power steering. (3) Low RDS(on) minimizes conduction losses for battery efficiency. (4) Fast switching allows PWM frequencies up to 20kHz for quiet operation. (5) Rugged EasyPACK package withstands automotive vibration and temperature cycling. (6) AEC-Q101 qualified versions available for automotive applications.
Contact our FAE team for EV auxiliary system design support and automotive qualification data.
What is the switching performance of GDM100N80?
GDM100N80 offers excellent switching performance: (1) Turn-on time tr = 20ns typical with proper gate drive. (2) Turn-off time tf = 12ns typical. (3) Gate charge Qg = 120nC at VGS = 10V. (4) Input capacitance Ciss = 8nF typical. (5) Output capacitance Coss = 1.8nF typical. (6) Reverse transfer capacitance Crss = 0.6nF typical. These characteristics enable switching frequencies up to 100kHz. The lower gate charge compared to GDM200N60 allows faster switching with less gate driver power, making it suitable for high-frequency applications.
Contact our FAE team for switching performance analysis and frequency optimization.
How does GDM100N80 compare to GDM200N60?
GDM100N80 and GDM200N60 serve different voltage and current requirements: (1) GDM100N80 (80V, 150A, 3.2mΩ) is designed for higher voltage applications (60-72V) with moderate current. (2) GDM200N60 (60V, 200A, 1.8mΩ) is for lower voltage (48V) with higher current. GDM100N80 has higher voltage rating but lower current capability. GDM200N60 offers lower RDS(on) for the same die size due to lower voltage rating. Selection depends on system voltage and current requirements. Both use the same EasyPACK package and have similar thermal performance.
Contact our FAE team for MOSFET module selection based on your voltage and current requirements.
What protection features are recommended for GDM100N80 applications?
Recommended protection features for GDM100N80 applications: (1) Overcurrent protection - current sensing with fast shutdown (<1μs) for short-circuit protection. (2) Over-temperature protection - NTC thermistor monitoring with shutdown at 125-150°C. (3) Overvoltage protection - TVS diodes or active clamping for voltage transients. (4) Undervoltage lockout - prevent operation with insufficient gate drive voltage. (5) Shoot-through protection - dead-time control and cross-conduction prevention in bridge configurations. (6) Soft-start - current limiting during startup to prevent inrush current. Starpower provides recommended protection circuit designs.
Contact our FAE team for protection circuit design and component recommendations.