GDM200N60

GDM200N60 is optimized for 10V gate drive (VGS = 10V) where it achieves the specified 1.8mΩ RDS(on). The MOSFET can also operate with 4.5V gate drive for compatibility with logic-level drivers, though RDS(on) increases to approximately 2.8mΩ. The gate threshold voltage VGS(th) is typically 2.5V. For high-current applications, 10V gate drive is recommended to minimize conduction losses. The gate drive circuit should provide fast rise/fall times (typically 20-50ns) to minimize switching losses. Gate resistor values of 2-5Ω are typical for this module.

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GDM200N60 in EasyPACK package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.5K/W. (2) Maximum junction temperature Tj(max) = 175°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +150°C. For continuous operation at 200A with 1.8mΩ RDS(on), the conduction loss is 72W, requiring a heatsink with thermal resistance of approximately 0.4K/W or better to maintain junction temperature below 125°C at 40°C ambient. Forced air cooling is typically required for continuous operation at full current.

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Yes, GDM200N60 is ideal for 48V battery management systems. Its characteristics make it perfect for this application: (1) 60V rating provides adequate margin for 48V nominal systems (max 60V during charging). (2) 200A current rating supports high-current battery switches and protection circuits. (3) Ultra-low RDS(on) of 1.8mΩ minimizes conduction losses and heating. (4) Fast switching enables active balancing circuits. (5) EasyPACK package provides reliable mounting and thermal management. (6) Low gate charge allows fast switching for protection functions. The module is widely used in 48V mild hybrid and energy storage systems.

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GDM200N60 offers excellent switching performance for high-current applications: (1) Turn-on time tr = 25ns typical with proper gate drive. (2) Turn-off time tf = 15ns typical. (3) Gate charge Qg = 180nC at VGS = 10V. (4) Input capacitance Ciss = 12nF typical. (5) Output capacitance Coss = 2.5nF typical. (6) Reverse transfer capacitance Crss = 0.8nF typical. These characteristics enable switching frequencies up to 100kHz with reasonable switching losses. The low parasitic inductance of the EasyPACK package minimizes voltage overshoot during switching.

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GDM200N60 offers advantages over paralleled discrete MOSFETs: (1) Better current sharing - integrated design ensures balanced current distribution. (2) Lower parasitic inductance - module package has lower stray inductance than PCB traces between discrete devices. (3) Simplified thermal management - single heatsink interface vs multiple devices. (4) Easier gate drive - single gate connection vs multiple parallel gates. (5) Higher reliability - qualified module vs discrete component assembly. (6) Compact footprint - module achieves higher power density. For currents above 100A, modules are generally preferred over discrete paralleling.

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GDM200N60 has specified avalanche capability for rugged operation: (1) Single-pulse avalanche energy EAS = 800mJ at starting Tj = 25°C. (2) Repetitive avalanche energy EAR = 50mJ at 25°C. (3) Avalanche current IAR = 100A. This ensures the module can safely absorb energy from unclamped inductive switching transients. However, for applications with frequent inductive switching, external protection such as TVS diodes or RC snubbers is recommended to limit avalanche stress and improve long-term reliability. The module is 100% avalanche tested during production.

Contact our FAE team for avalanche ruggedness testing data and inductive load protection design.