GDS100M12B1
1200V 100A SiC MOSFET module with 12mΩ RDS(on), ideal for EV charging and solar inverters.
Product Overview
Description
1200V 100A SiC MOSFET module with 12mΩ RDS(on). Silicon carbide technology for ultra-fast switching.
Easy1B package with integrated NTC and low parasitic inductance. Supports switching up to 100kHz.
In stock for EV charging and renewable energy applications. FAE support for gate drive and thermal design.
Product Series
1200V SiC
Primary Application
Key Features
- High efficiency and reliability
- Optimized for industrial applications
- Comprehensive technical support
- Available from stock
Specifications
| Part Number | GDS100M12B1 |
|---|---|
| Voltage | 1200V |
| Current | 100A |
| Rds On | 12mΩ |
| Switching Frequency | 100kHz |
| Package | Easy1B |
| Short Description | 1200V 100A SiC MOSFET module with 12mΩ RDS(on), ideal for EV charging and solar inverters. |
| Description Paragraphs | 1200V 100A SiC MOSFET module with 12mΩ RDS(on). Silicon carbide technology for ultra-fast switching.,Easy1B package with integrated NTC and low parasitic inductance. Supports switching up to 100kHz.,In stock for EV charging and renewable energy applications. FAE support for gate drive and thermal design. |
| Features | Silicon carbide MOSFET with 12mΩ RDS(on) at 25°C,Zero reverse recovery charge with SiC Schottky diode,High switching frequency: up to 100kHz,Low switching losses for high efficiency,Easy1B package with RthJC = 0.4K/W,Integrated NTC temperature sensor |
| Applications | EV charging stations,Solar inverters,High-frequency power supplies,Automotive DC-DC,Energy storage |
| Stock | In Stock |
| Moq | 5 |
| Lead Time | 3-4 weeks |
| Faqs | [object Object],[object Object],[object Object],[object Object],[object Object],[object Object] |
| Fae Review | [object Object] |
| Alternative Parts | [object Object],[object Object] |
| Companion Parts | COMP-A,COMP-B,COMP-C |
| Slug | gds100m12b1 |
Applications
Motor Drives
Variable frequency drives and servo motor controls
Power Supplies
SMPS, UPS, and industrial power systems
Renewable Energy
Solar inverters and wind turbine converters
EV Charging
Electric vehicle charging stations
FAE Expert Insights
"Good performance and reliability. Suitable for various industrial applications."
Reliable, good performance
— Senior FAE, LiTong Electronics
Frequently Asked Questions
What is the recommended gate drive voltage for GDS100M12B1?
GDS100M12B1 is optimized for +18V turn-on and -3V to -5V turn-off gate drive: (1) +18V VGS(on) ensures low RDS(on) and minimizes conduction losses. (2) Negative turn-off voltage (-3V to -5V) is critical to prevent false turn-on due to high dv/dt (>50V/ns). (3) Gate resistor selection affects switching speed and EMI - typical values are 5-10Ω for both turn-on and turn-off. (4) The gate drive should provide 5-10A peak current for fast switching. (5) Active Miller clamp is recommended for high dv/dt immunity. Starpower provides detailed gate drive recommendations and reference circuits.
Contact our FAE team for SiC gate driver IC recommendations and circuit design.
What is the thermal resistance of GDS100M12B1?
GDS100M12B1 in Easy1B package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.4K/W. (2) Maximum junction temperature Tj(max) = 175°C. (3) Recommended operating junction temperature Tj(op) = -40°C to +150°C. For continuous operation at 100A with 12mΩ RDS(on), the conduction loss is 120W at 150°C (higher than 25°C due to positive temperature coefficient). This requires a heatsink with thermal resistance of approximately 0.3K/W or better to maintain junction temperature below 150°C at 40°C ambient. High-performance thermal interface material is recommended.
Contact our FAE team for thermal simulation and heatsink selection guidance.
Can GDS100M12B1 be used for EV fast charging applications?
Yes, GDS100M12B1 is ideal for EV fast charging applications. Its characteristics make it perfect for this demanding application: (1) 1200V rating supports 800V battery systems and 1000V DC bus. (2) 100A current rating supports DC fast chargers up to 100-150kW. (3) 100kHz switching enables compact magnetic components. (4) High efficiency (>98%) reduces cooling requirements. (5) Bidirectional capability supports V2G applications. (6) High reliability for 24/7 operation. The Easy1B package is widely used in EV charger designs and compatible with standard heatsinks.
Contact our FAE team for EV charger design support and topology recommendations.
What is the switching performance of GDS100M12B1 compared to IGBT?
GDS100M12B1 offers dramatically superior switching performance compared to IGBT: (1) Switching frequency - up to 100kHz vs 10-20kHz for IGBT. (2) Turn-on time - typically 50ns vs 200-500ns for IGBT. (3) Turn-off time - typically 30ns vs 300-800ns for IGBT (including tail). (4) Switching losses - approximately 1/10th of equivalent IGBT. (5) dv/dt - up to 100V/ns vs 5-10V/ns for IGBT. This enables dramatic reductions in passive component size and weight. However, the high dv/dt requires careful PCB layout and EMI filtering design.
Contact our FAE team for switching performance analysis and EMI mitigation strategies.
What are the layout considerations for GDS100M12B1?
GDS100M12B1 requires careful PCB layout due to high switching speed: (1) Minimize gate loop inductance - use wide, short traces and place gate driver close to module. (2) Kelvin source connection - use separate source connection for gate drive to avoid source inductance feedback. (3) Decoupling capacitors - place high-frequency ceramic capacitors (100nF-1μF) very close to module terminals. (4) Minimize power loop inductance - use laminated busbars or parallel planes for DC link. (5) EMI considerations - implement proper shielding and filtering due to high dv/dt. (6) Thermal vias - use sufficient thermal vias under the module for heat dissipation. Starpower provides detailed layout guidelines.
Contact our FAE team for PCB layout review and optimization recommendations.
How does the cost of GDS100M12B1 compare to IGBT modules?
GDS100M12B1 has higher component cost than equivalent IGBT modules (typically 2-3x), but system-level cost may be lower: (1) Passive components - smaller filters and magnetics due to high frequency (30-50% savings). (2) Cooling - smaller heatsinks and fans due to higher efficiency (20-30% savings). (3) Enclosure - smaller size and weight reduce enclosure cost. (4) Energy savings - 1-3% higher efficiency reduces operating costs. (5) Reliability - lower operating temperatures improve system reliability. For high-volume applications, the total cost of ownership often favors SiC. Starpower can provide ROI analysis for specific applications.
Contact our FAE team for system cost analysis and ROI calculations.