STMicroelectronics Power Discretes

Choose MOSFETs for high-frequency applications (>20kHz) and lower voltage (<600V) where switching losses dominate. MOSFETs offer faster switching and lower conduction losses at lower voltages. Choose IGBTs for high-voltage (>600V) and high-current applications where conduction losses dominate. IGBTs have lower conduction losses at high currents but slower switching speeds. For EV traction inverters above 650V, IGBTs or SiC MOSFETs are preferred. For DC-DC converters and onboard chargers, super-junction MOSFETs excel.

Analyze your voltage, current, and switching frequency requirements. Contact our power specialists for device selection.

ST's silicon carbide (SiC) MOSFETs offer significant advantages over silicon devices: Higher breakdown voltage with lower on-resistance, enabling higher efficiency and power density. SiC devices can operate at higher temperatures (200°C+) and switching frequencies (100kHz+), reducing system size and cooling requirements. ST is a pioneer in SiC technology with over 25 years of experience and more than 1 billion devices shipped. ST's SiC MOSFETs feature stable threshold voltage and rugged body diodes for reliable operation.

Consider SiC MOSFETs for high-efficiency applications above 650V where system size and efficiency are critical.

Rds(on) is the drain-source on-resistance when the MOSFET is fully enhanced. Lower Rds(on) means lower conduction losses (P = I² × Rds(on)). However, lower Rds(on) typically comes with higher gate charge (Qg), increasing switching losses. The optimal device balances conduction and switching losses for your specific application. Always check Rds(on) at your operating temperature as it increases with temperature (typically 1.5x-2x at 100°C). ST provides Rds(on) vs temperature curves in datasheets.

Calculate total losses (conduction + switching) at your operating conditions to select the optimal device.

STripFET is ST's trench-gate MOSFET technology optimized for low-voltage applications (up to 200V) with industry-leading Rds(on) × area figure of merit. It's ideal for DC-DC converters and battery-powered applications. MDmesh is ST's super-junction technology for high-voltage MOSFETs (500V-900V) featuring multiple epitaxial layers for reduced Rds(on) while maintaining high breakdown voltage. MDmesh is optimized for power supplies, LED drivers, and PFC circuits. Both technologies offer multiple generations with continuous improvements.

Use STripFET for low-voltage high-current applications. Use MDmesh for high-voltage power conversion.

ST offers comprehensive package options: Through-hole packages (TO-220, TO-247, TO-3P) for prototyping and high-power applications

Surface-mount packages (DPAK, D2PAK, PowerFLAT) for automated assembly

Advanced packages (HiP247, ACEPACK) with improved thermal performance and kelvin source connections for high-frequency switching. The ACEPACK family includes driver-integrated power modules for simplified design. Package selection affects thermal performance, switching behavior, and manufacturing cost.

Select package based on thermal requirements, switching frequency, and manufacturing capabilities.