CR Microelectronics IGBTs | Product List | Distributor

About IGBTs

CR Micro IGBT portfolio includes trench field-stop technology devices optimized for high-efficiency power conversion. Voltage ratings from 600V to 1700V cover applications from industrial motor drives to renewable energy systems. The devices feature low VCE(sat), fast switching, and excellent short-circuit ruggedness.

As an authorized distributor of CR Microelectronics, LiTong Electronics provides a comprehensive range of IGBTs products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right IGBTs

Product List

2 products available

Part Number ↕	Voltage ↕	Current ↕	VCE(sat) ↕	Eon/Eoff ↕	Package ↕	Package ↕	Stock Status	Action
CSG20N65A	650V	40A	-	-	TO-247	TO-247	In Stock	View Details
CSG40N120A	1200V	80A	-	-	TO-247	TO-247	In Stock	View Details

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Frequently Asked Questions

What is trench field-stop technology in CR Micro IGBTs?

Trench field-stop (FS) technology combines two advanced features: (1) Trench gate structure provides higher channel density and lower conduction losses compared to planar gates. (2) Field-stop layer allows thinner wafer design while maintaining high voltage blocking capability, resulting in lower switching losses. CR Micro's trench FS IGBTs offer an optimal trade-off between conduction and switching losses, making them ideal for high-frequency applications up to 30kHz. The technology also provides excellent short-circuit ruggedness and positive temperature coefficient for easy parallel operation.

Contact our FAE team for detailed technology comparison and application-specific recommendations.

What is the maximum switching frequency for CR Micro IGBTs?

CR Micro IGBTs support switching frequencies up to 30kHz depending on the series: (1) 600V-650V series: up to 30kHz for high-efficiency applications. (2) 1200V series: up to 20kHz for industrial drives. (3) 1700V series: up to 10kHz for high-power applications. The actual maximum frequency depends on thermal constraints, switching losses, and cooling system capability. For higher frequencies (>30kHz), consider using CR Micro's SiC MOSFETs or hybrid modules.

Contact our FAE team for switching frequency optimization and thermal analysis.

Do CR Micro IGBTs have built-in anti-parallel diodes?

Yes, most CR Micro IGBT products are available with co-packed anti-parallel freewheeling diodes. The diode characteristics are optimized to match the IGBT switching performance: (1) Fast recovery diodes for high-frequency applications. (2) Soft recovery characteristics to minimize EMI and voltage overshoot. (3) Low forward voltage for reduced conduction losses. For applications requiring custom diode specifications, discrete diode-IGBT combinations are also available. The diode ratings match the IGBT current and voltage ratings for reliable operation.

Contact our FAE team for diode specifications and recommendations for your specific application.