Semikron International IGBT Modules

Understanding Semikron IGBT module parameters is crucial for proper selection: Collector-Emitter Voltage (Vces) - Must exceed your DC bus voltage with safety margin (typically 1.5-2x)

Collector Current (Ic) - Choose based on RMS current with 1.5-2x derating for reliability

Vce(sat) - Lower values mean lower conduction losses but may trade off switching speed

Switching Energy (Eon/Eoff) - Determines switching losses at your operating frequency

Package Type - SEMiTRANS 4 for standard drives, SKiiP for compact designs with integrated drivers

Temperature Range - Industrial (-40°C to +175°C) or extended ratings. Our product tables show all these parameters with typical values at 25°C. For detailed characterization curves, refer to the datasheet or contact our FAE team for application-specific guidance.

Click on any specific model in the table to view detailed specifications, or contact us for selection assistance based on your application requirements.

SEMiTRANS 4 and SKiiP 3 serve different design needs: SEMiTRANS 4 - Industry-standard package for industrial motor drives (5-200kW), current ratings 75A-600A, voltage ratings 1200V-1700V, requires external gate driver, flexible design options, ideal for general-purpose inverters, pumps, fans, and conveyor systems. SKiiP 3 - Intelligent power module with integrated gate driver and protection (10-400A), compact design with built-in protection features, faster development time, ideal for HVAC systems, pump drives, and appliance applications where compact size and fast time-to-market are critical. SEMiTRANS 4 offers maximum flexibility for custom designs, while SKiiP 3 provides turnkey solutions with reduced component count and simplified PCB layout.

Compare specific SEMiTRANS 4 and SKiiP 3 models in the table below to find the optimal package for your power and application requirements.

Total Semikron IGBT power losses consist of conduction losses and switching losses: Conduction Losses = Vce(sat) × Ic × Duty Cycle. Use the Vce(sat) value from the table at your operating current and junction temperature. Switching Losses = (Eon + Eoff) × Switching Frequency. Eon and Eoff values are provided in the datasheet at specific test conditions. Total Losses = Conduction Losses + Switching Losses. Thermal Considerations - Multiply total losses by thermal resistance (Rth) to calculate temperature rise. Ensure junction temperature stays below maximum rating (typically 175°C for SEMiTRANS 4) with adequate margin. For high-frequency applications (>10kHz), switching losses dominate

for low-frequency/high-current applications, conduction losses are more significant. Our FAE team can provide detailed loss calculations for your specific operating conditions.

Select a Semikron IGBT module from the table with adequate current rating and low Vce(sat) for your efficiency requirements, or request a detailed loss analysis from our technical team.

Semikron IGBT part numbers follow a systematic coding: SKM (First Letters) - SKM indicates a standard IGBT module, SKiiP indicates intelligent power module

100/200 (Numbers) - Nominal current rating in Amperes

G (Letter) - Indicates IGBT technology generation

B (Letter) - Package type (B = SEMiTRANS 4)

12 (Numbers) - Voltage rating in hundreds of volts (12 = 1200V)

T4 (Letters) - Specific chip technology and package variant. For example, SKM200GB12T4 is a 200A, 1200V IGBT4 module in SEMiTRANS 4 package. SKiiP32NAB12T1 is a 32A, 1200V intelligent power module in SKiiP 3 package. Understanding these codes helps identify compatible replacements and alternative ratings. Contact us if you need help interpreting part numbers or finding cross-references.

Use the part number decoder above to understand specifications, or click on any part number in the table to view complete details and datasheets.

Voltage rating selection depends on your DC bus voltage and safety margins: 1200V IGBTs - For 380-480VAC industrial applications with DC bus up to 600-700V, most common for general-purpose drives and inverters

1700V IGBTs - For 690VAC applications or high-voltage DC bus up to 1000V, used in large drives, renewable energy, and traction. Safety Margin - Select Vces rating at least 1.5-2x your maximum DC bus voltage to account for voltage spikes and transients. Overvoltage spikes during switching can exceed DC bus voltage by 20-30%, so adequate voltage margin is essential for reliable operation. For 400VAC applications, 1200V modules are the standard choice. For 690VAC applications, 1700V modules are required.

Filter the table by voltage rating using the dropdown above, or contact our technical team for voltage selection guidance based on your specific application.

Proper thermal management is critical for Semikron IGBT reliability: Thermal Resistance (Rth) - Listed in the table as Rth(j-c) junction-to-case and Rth(c-s) case-to-heatsink

calculate total thermal resistance for your cooling system. Maximum Junction Temperature - 175°C for SEMiTRANS 4, 150°C for SKiiP modules

operate below 125°C for long-term reliability. Heat Sink Selection - Size based on total power losses and maximum allowable temperature rise. Thermal Interface Material - Use high-quality thermal grease or phase-change materials between module and heatsink. Mounting Torque - Follow specified torque values for screws to ensure proper thermal contact without damaging the module. Forced Air vs. Liquid Cooling - High-power modules (>300A) typically require liquid cooling or substantial heatsinks with forced air. Our FAE team can assist with thermal calculations and cooling system design.

Review thermal specifications in the table, then click on specific models for detailed thermal data and mounting guidelines.

Yes, Semikron IGBT modules can be paralleled for higher current, but careful design is required: Current Sharing - Use modules with positive temperature coefficient (most modern Semikron IGBTs) so current naturally balances as devices heat up. Gate Drive - Use identical gate drivers with matched propagation delays

connect gates through individual resistors to prevent oscillation. Symmetrical Layout - Ensure equal trace lengths and impedances for all parallel devices to balance switching. Derating - Parallel 20-30% more devices than theoretically required to account for current imbalance. Temperature Sensing - Monitor each module individually as they may operate at different temperatures. Semikron's SEMiTRANS 4 modules are designed for parallel operation with matched characteristics. Contact our FAE team for detailed parallel connection guidelines and design review.

Select Semikron IGBT modules from the table with appropriate current ratings for your parallel configuration, or contact us for parallel design assistance.

IGBT3 and IGBT4 represent different generations of Semikron IGBT technology: IGBT3 (Previous Generation) - Trench gate field-stop technology offering good trade-off between conduction and switching losses, widely used in industrial drives and renewable energy. IGBT4 (Current Generation) - Advanced trench-gate field-stop technology with optimized cell design, lower Vce(sat) for reduced conduction losses, improved switching softness reducing EMI, higher power density enabling smaller packages. Selection Guidance - IGBT4 offers best-in-class efficiency for new designs where maximum performance is required

modules with T4 suffix use IGBT4 technology. IGBT3 modules are still available for existing designs requiring form-fit-function replacement. Both technologies are available in SEMiTRANS 4 and SKiiP 3 packages. Check the part number suffix to identify the technology generation.

Compare IGBT3 and IGBT4 models in the table to evaluate the performance benefits for your specific application requirements.

Switching energy parameters indicate dynamic losses during turn-on and turn-off: Eon (Turn-on Energy) - Energy dissipated during IGBT turn-on, includes diode reverse recovery losses in the complementary diode

Eoff (Turn-off Energy) - Energy dissipated during IGBT turn-off, primarily due to current-voltage overlap

Etotal = Eon + Eoff - Total switching energy per pulse. Values in the table are typically measured at rated current, half rated voltage, and 175°C junction temperature. Switching Power Loss = Etotal × Switching Frequency. Lower switching energy enables higher operating frequencies and reduces cooling requirements. Note that switching energy varies with gate resistance, DC bus voltage, and temperature - refer to datasheet curves for detailed characterization.

Select Semikron IGBT modules with low switching energy for high-frequency applications, or contact us for switching loss calculations at your specific operating conditions.

Semikron IGBT modules include several integrated protection features: NTC Temperature Sensor - Integrated thermistor for temperature monitoring and over-temperature protection, resistance value provided in datasheet

Isolation Voltage - 4000V AC (1 minute) isolation between power terminals and baseplate for safety

Spring Contact Technology - Reliable connection technology in SKiiP modules eliminating bond wires

Low Inductance Design - Optimized internal layout reduces voltage overshoot during switching

Short-Circuit Ruggedness - IGBTs rated for 10μs short-circuit withstand time at rated voltage. External Protection Required - Gate drivers must provide desaturation detection, under-voltage lockout (UVLO), and soft shutdown. The combination of integrated features and proper external protection ensures reliable operation in demanding applications.

Review protection features for each model in the table, then click for detailed specifications and recommended gate driver pairings.

Gate driver selection criteria for Semikron IGBT modules: Isolation Voltage - Must exceed DC bus voltage with margin (4000V isolation for 1200V bus)

Peak Output Current - 2A minimum for modules up to 100A, 10A+ for larger modules to ensure fast switching

Propagation Delay - Matched delays for parallel operation, typically <200ns

Protection Features - Desaturation detection for short-circuit protection, UVLO for safe startup, soft shutdown for fault conditions

Package - Standard or reinforced isolation based on application requirements. Recommended Pairings - SEMiTRANS 4 modules up to 200A: SKYPER32PRO (23A, 4000V isolation)

High-power SEMiTRANS 4: SKYPER42R (40A peak)

SKiiP modules: Built-in drivers, no external driver needed. Our product tables show recommended gate drivers for each Semikron IGBT module, or contact our FAE team for detailed pairing recommendations.

Click on any Semikron IGBT module in the table to see recommended gate drivers, or browse the Gate Drivers category for compatible options.