MacMic Science & Technology MOSFET Modules

Choose MOSFET over IGBT when: (1) Operating voltage is below 200V (MOSFETs have lower conduction losses at low voltages)

(2) Switching frequency is above 100KHz (MOSFETs switch faster with lower switching losses)

(3) Synchronous rectification is needed (MOSFETs can conduct in reverse with low voltage drop)

(4) Application requires 12V, 24V, or 48V output (server power, telecom, battery systems). IGBTs are preferred for higher voltages (>300V) and lower frequencies (<20KHz).

Consider voltage level and switching frequency when choosing between MOSFET and IGBT.

RDS(on) directly determines conduction losses in MOSFETs. Conduction loss = I² × RDS(on) × duty cycle. Lower RDS(on) means higher efficiency but typically higher cost and larger die size. For example, reducing RDS(on) from 5mΩ to 2.5mΩ halves conduction losses at the same current. In high-current applications (100A+), even small RDS(on) differences significantly impact efficiency and thermal design. Balance cost, efficiency, and thermal requirements when selecting RDS(on).

Calculate conduction losses based on your current requirements and efficiency targets.

MacMic MOSFET modules require: (1) Gate voltage of 10-12V for full enhancement (never exceed 20V)

(2) Gate driver with sufficient current capability (2A+ for fast switching)

(3) Proper gate resistor selection (typically 5-15Ω) to control switching speed and EMI

(4) Miller clamp protection to prevent false turn-on during high dv/dt transitions

(5) Fast switching requires low inductance gate drive loop. Use dedicated synchronous rectifier controllers for optimal performance in rectification applications.

Ensure your gate driver can provide adequate current and voltage for the MOSFET module.